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| Datasheet File OCR Text: |
| 2sB595 pnp epitaxial silicon transistor low frequency power amplifier to-220 ! c o m p l e m e n t to 2 s d 5 25 absolute maximum ratings (t a =25 ) characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) collector dissipation (tc=25 ) junction temperature storage temperature v cbo v ceo v ebo i c p c t j tstg -100 -100 -5 -5 40 150 -50~150 v v v a w electrical characteristics (t a =25 ) characteristic symbol test condition min typ max unit collector cutoff current emitter cutoff current dc current gain collector- emitter saturation voltage current gain bandwidth product i cbo i ebo h fe1 v ce(sat) f t v cb = -100v , i e =0 v eb =- 5v , i c = 0 v ce = -5v , i c =-1a i c =-4a , i b =-0.4a v ce = -5v , i c =-0.5a 40 8 -10 10 320 -2.0 a a v m hz wing shing computer components co., (h.k.)ltd. tel:(852)2341 9276 fax:(852)2797 8153 homepage: http://www.wingshing.com e-mail: wsccltd@hkstar.com
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